World’s Fastest Flash Memory: Implications for Compute Systems
Researchers at Fudan University in Shanghai have developed a groundbreaking flash memory technology capable of switching at an astonishing 400 picoseconds, there are one trillion picoseconds in a second.
This new chip, dubbed “PoX” (Phase-change Oxide), leverages two-dimensional Dirac graphene, facilitating rapid and unimpeded charge movement. By adjusting the Gaussian length of the memory channel, the technology achieves a 2D super-injection phenomenon. This results in an exceptionally fast and nearly unlimited flow of charge into the memory’s storage layer.
Key Features and Potential Advancements:
- Ultra-Fast Write Speeds: The PoX chip’s 400-picosecond switching capability significantly surpasses existing flash memory technologies.
- Low Energy Consumption: This new memory is designed to be more energy efficient.
- Non-Volatile Memory: Like existing flash memory, the PoX chip retains data even without power.
- Eliminating the AI Memory Bottleneck: The technology has the potential to drastically reduce the energy consumption associated with data movement in AI hardware. Currently, a significant portion of energy in AI systems is used in moving data rather than processing it.
- Improved Device Performance: Integrating this technology into devices like smartphones and computers could mitigate lagging and overheating issues that are often attributed to current storage solutions.
Real-World Deployment:
The research team has already produced a small-scale, fully functional chip and is actively collaborating with manufacturing partners to expedite the real-world application of this technology. The future of how systems interact and access storage could be changed bringing forth massive improvements in the speed of handling and accessing data.
